Byv10 60 datasheet pdf

Single phase, half wave, 60 hz, resistive or inductive load. I absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v continuous id 20 a drain current pulsed idm 80 a avalanche energy single pulsednote 2 eas 1200 mj to247 370. Stmicroelectronics, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Byv1030 philips nxp semiconductors, byv1030 datasheet. Please note the new package dimensions arccording to pcn 2009. Small signal schottky diode, byv10 60 datasheet, byv10 60 circuit, byv10 60 data sheet. Byv1060 pdf, byv1060 description, byv1060 datasheets. O absolute maximum ratings tc25c unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 10 a drain current continuous id 10 a pulsed note 2 idm 38 a avalanche energy. Semiconductor 10n60 series rroohhss nell high power products nchannel power mosfet 10a, 600volts description the nell 10n60 is a threeterminal silicon device with current conduction capability of 10a, fast switching speed, low onstate resistance, breakdown voltage rating of 600v, and max. Symbol byv26a byv26b byv26c byv26d byv26e byv26g unit maximum repetitive peak reverse voltage vrrm 200 400 600 800 1400 v maximum continuous reverse voltage vr 200 400 600 800 1400 v.

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